Abstract
Pr4O7-Pr2CuO4-δ (PCO) thin films were grown on Pt (Pt/Ti/SiO2/Si) substrates by pulsed laser deposition and their resistive switching behavior was investigated. The resistance ratio RH/L (Rhigh/Rlow) could be larger than 104, which can be maintained up to 50cycles and 104s without detectable degradation. The results show that the Pt/Pr4O7-PCO/Pt device possesses excellent endurance and retention properties. The physical mechanism of resistive switching in Pr4O7-PCO film could be ascribed to the forming and rupturing of conductive filaments via migration of oxygen vacancies.
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