Abstract
Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.
Highlights
High-density and low-power consumption devices are in high demand for the enablement of artificial intelligence/machine learning (AI/ML) and neuromorphic computation [1]
The unipolar hysteresis loop for AFE-Hf1−x Zrx O2 (HZO) with built-in bias by work function difference of electrodes was used in anti-ferroelectric random-access memory (RAM) to achieve an endurance of more than 109 cycles, which is higher than ferroelectric
TheComposition junction current (Itot ) characteristics are composed of the mechanisms for the
Summary
High-density and low-power consumption devices are in high demand for the enablement of artificial intelligence/machine learning (AI/ML) and neuromorphic computation [1]. Resistive ferroelectric-based memory has attracted great interest for memory devices due to its non-volatility for data storage, non-destructive readout, and high switching speed [27,28,29,30]. Anti-ferroelectric (AFE) Hf1−x Zrx O2 (HZO) is reported to provide a faster switching speed for polarization and a higher fatigue resistance than FE HZO under bipolar electrical cycling [31,32,33]. The unipolar hysteresis loop for AFE-HZO with built-in bias by work function difference of electrodes was used in anti-ferroelectric random-access memory (RAM) to achieve an endurance of more than 109 cycles, which is higher than ferroelectric. The current operational mechanism for the AFE diode with one of these two hysteretic branches is discussed, while the high ratio of the HRS/LRS and switching endurance are demonstrated. The CMOS process compatibility and scaling capability of Hf1−x Zrx O2 enable emerging memory applications for AI and neuromorphic computation devices
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