Abstract
We report a high lasing wavelength uniformity of optically pumped InP-based microdisk lasers processed with electron-beam lithography, heterogeneously integrated with adhesive bonding on silicon-on-insulator (SOI) waveguide circuits and evanescently coupled to an underlying waveguide. We study the continuous wave laser emission coupling out of the SOI via a grating coupler etched at one side of the waveguide, and demonstrate a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500 pm. The deviation in the diameter of the microdisks as low as a few nanometers makes all-optical signal processing applications requiring cascadability possible.
Highlights
The integrated optics community has lately intensively turned its attention to the use of the silicon-on-insulator (SOI) platform for the fabrication of photonic devices
We report a high lasing wavelength uniformity of optically pumped InP-based microdisk lasers processed with electron-beam lithography, heterogeneously integrated with adhesive bonding on siliconon-insulator (SOI) waveguide circuits and evanescently coupled to an underlying waveguide
We study the continuous wave laser emission coupling out of the SOI via a grating coupler etched at one side of the waveguide, and demonstrate a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500pm
Summary
The integrated optics community has lately intensively turned its attention to the use of the silicon-on-insulator (SOI) platform for the fabrication of photonic devices. We study the room temperature and continuous wave laser emission of InP-based microdisk lasers, fabricated using electron-beam lithography, heterogeneously integrated and evanescently coupled to SOI waveguides. Microdisks with nominally identical designs and coupled to waveguides with the same width are studied under optical pumping The spectra from the microdisk lasers are plotted together on Fig. 7 From this characterization, we demonstrate that a standard deviation in lasing wavelength of nominally identical devices on the same chip lower than 500pm is achievable
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