Abstract
The uniformity of deep levels in semi-insulating InP wafers, which have been obtained by multiple-step wafer annealing under phosphorus vapor pressure, was studied using the thermally stimulated current (TSC) and photoluminescence (PL) methods. Only three traps related to Fe, T0 (ionization energy Ei=0.19 eV), T1 (0.25 eV), and T2 (0.33 eV), probably forming complex defects, were observed in the wafer and they exhibited a relatively uniform distribution. PL spectra relating to phosphorus vacancies observed in some regions of the wafer are correlated with a small TSC signal having an ionization energy of 0.43 eV.
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