Abstract
The realization and characterization of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMTs, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity for both the drain current and pinch-off voltage values have been obtained. The linearity is confirmed by a quasiflat profile of the transconductance and of the maximum available gain (MAG) over a wide gate source voltage. Power and intermodulation distortion measurements at 16 GHz have been performed. An IP3 value of 25 dBm has been obtained for a 2×75 μm device. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 23: 192–194, 1999.
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