Abstract
Silicon single crystals nominally 1 cm in diameter and 16 cm long have been grown with aluminum doping in a floating zone apparatus. Crystals have been prepared with nominal p‐type resistivities of 0.3 and 5 ohm‐cm with variations of 5% or less along the crystal length. Variations of resistivity with rotation rate, growth rate, ambient gas flow rate, and other growth variables have been studied. Zone volume variations were also measured.
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