Abstract
Pyramidal texturing of monocrystalline silicon using alkaline etchants depends strongly upon the initial condition of the wafer surface and upon etching parameters. Texturization of polished wafers is often incomplete, with non-textured areas arising to yield high values of reflectance. A new technique is introduced for uniform pyramid formation on polished wafers. Nitrogen is used to expel dissolved oxygen in the etch solution, since it has been observed that oxidizing agents act to encourage polished etch surfaces.
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