Abstract
Four-inch Si wafers were uniformly coated with diamond in a microwave electron cyclotron resonance (μWECR) process at 2 × 10 −2 mbar gas pressure. The thermal filament chemical vapour deposition technique was employed to pre-coat the wafers only for the optimization of the μWECR technique. Special work was necessary to determine the early growth of diamond. Good-quality coatings can be obtained, allowing patterning and boron doping for the fabrication of microsensors, such as thermistors, on Si wafers.
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