Uniform bipolar resistive switching behaviors in BiFeO3 thin films on Fe-doped LaNiO3 electrodes

Abstract

The uniform bipolar resistive switching effect has been observed in Pt/BiFeO3/LaNi0.95Fe0.05O3/Si structures. The use of Fe doped LaNiO3 as electrodes can improve the resistive switching performance of Pt/BiFeO3/LaNi0.95Fe0.05O3/Si devices, such as lower operating voltages and power consumption. Such devices also exhibit stable bipolar resistive switching characteristics with a resistance ratio of about 20 and a retention time of 103 s. On the basis of the current–voltage characteristics, the dominant conduction mechanisms were inferred to be ohmic conduction in the low-resistance state and Schottky emission in the high-resistance state. The conducting filament-related model has been proposed to explain the physical mechanism underlying the bipolar resistive switching behavior in terms of the migration of oxygen vacancies.