Uniform Bi 2S 3 nanowires: Structure, growth, and field-effect transistors

Abstract

Large-scale single-crystalline Bi 2S 3 nanowires were prepared by a simple one-step hydrothermal reaction between Bi(NO 3) 3 and Na 2S 2O 3, without using any organics in the experiment. These Bi 2S 3 nanowires have uniform size diameters which are about 60 nm. The structure of the nanowires is determined to be of the orthorhombic phase, and the growth direction is along the [001] direction. The growth mechanism of the nanowires was investigated based on high-resolution transmission electron microscopy observations. The field-effect transistors (FETs) have been fabricated using a single Bi 2S 3 nanowire, n-type semiconductor behavior has been observed, and high on/off ratio of about 3 orders of magnitude has been achieved.