Abstract
Transient Ionizing Radiation Response (TIRR) of Metal Oxide Semi-Conductor Field Effect Transistors (MOSFET) is a transient parasitic current induced by ionizing radiations. These radiations might have various both spatial and temporal profiles depending on the considered application. In recent work, we have developed Single Event Transient (SET) compact model for MOSFET, which is the parasitic current pulse induced by an individual ionizing particle. This model has been implemented in Verilog-A, as an equivalent electrical circuit made of many RC circuits. In this work, we extend this model to any kind of TIRR of SOI MOSFET, keeping the same compact modeling approach. Cross-comparisons with realistic 3D TCAD simulations of SOI MOSFET are then made.
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