Abstract
ABSTRACTThe three dimensional equations which govern free molecular or ballistic transport and heterogeneous gas-solid reactions in features on patterned wafers during low pressure processing are reviewed. The governing equations specific to long rectangular trenches are extended to include nonuniform molecular velocity distributions in the source volume above the wafer as well as surface diffusion of adsorbed species or intermediates. Introduction of reaction stoichiometries and kinetic expressions for general deposition and etch reactions completes the specification of the problem. Local generalized sticking factors arise in the process of nondimensionalizing the governing equations.
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