Abstract
A unified analytical charge control model covering the entire range of gate voltages from below and above threshold is developed for heterojunction field-effect transistors (HFETs). This model is based on a new interpretation of the quantized energy levels for the two-dimensional electron gas. It reduces to a classical charge sheet model in the limit of low surface field. The model is used to interpret the experimental data for the subthreshold regime of HFETs. The results indicate wide range variation of the effective acceptor concentration after device fabrication processing in the unintentionally doped GaAs buffer layer.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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