Abstract
The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time. The analytical solutions of the surface electric field distributions and potential distributions are derived on the basis of the 2-D Poisson equation. The variation of the buried layer parameters modulates the surface electric field by the electric field modulation effect to optimize the surface electric field distribution of the device. Also, the simulation results obtained through the simulation software ISE are consistent with the expected results of the analytical model. This not only proves the feasibility of the electric field modulation theory, but also shows that the accurate analytical model will be of great guiding significance for designing and optimizing the same LDMOS based on SOI structures.
Highlights
As the most widely used lateral power device, SOI LDMOS devices combine SOI technology, microelectronic technology and power electronics technology [1]
MODEL VERIFICATION OF step buried oxide layer SOI (SBOSOI) From Fig. 7(a), it can be seen that the buried electric field distribution of the SBOSOI device has two electric field peaks at the position of the single-sided step compared with the conventional SOI structure
Based on the existing research, this paper proposes a unified analytical model of SOI LDMOS based on electric field modulation
Summary
As the most widely used lateral power device, SOI LDMOS devices combine SOI technology, microelectronic technology and power electronics technology [1]. Under the effect of electric field modulation [17], these changes in buried layer will introduce new electric field peaks on the surface of the drift region, which will make the surface electric field distribution more evenly and improve the performance of SOI LDMOS significantly. For SOI LDMOS based on electric field modulation, there is no uniform analytical model to explain the electric field modulation effect in these structures in essence. A unified numerical model of SOI LDMOS based on electric field modulation is proposed. Several SOI LDMOS structures based on electric field modulation are taken as examples to check on the accuracy of the unified numerical model and explain the mechanism of electric field modulation in detail. According to the continuity of electric field and electric potential in the limiting surface of adjacent areas in drift region, equation (5)-(6) can be obtained. Equation (7) represents the electric potential at the boundary of the drift region
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