Abstract
We unify step bunching (SB) instabilities occurring under various conditions on crystal surfaces below roughening. We show that when attachment-detachment of atoms at step edges is the rate-limiting process, the SB of interacting, concentric circular steps is equivalent to the commonly observed SB of interacting straight steps under deposition, desorption, or drift. We derive a continuum Lagrangian partial differential equation, which is used to study the onset of instabilities for circular steps. These findings place on a common ground SB instabilities from numerical simulations for circular steps and experimental observations of straight steps.
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