Abstract
In this paper, we propose new structure of unidirectional oxide hetero-interface thin-film diode for enhanced on-current density with low operating voltage by inserting ultrathin insulator layer. It is figured out that the governing mechanism of thin film diode transfers from the space-charge-limited-conduction (SCLC) model to Fowler–Nordheim tunneling (FNT) model depending on the insulator thickness of below 10 nm. The current density of the ultrathin insulator film (3 nm thick) diode is 104 times higher than the diode with 30 nm thick insulator. Consequently, the simple engineering of insulator layer thickness enables to reach the high current density and low operating voltage. Furthermore, the ultrathin insulator film diode has strong potential for nano-scale applications such as resistive-random-access-memory (ReRAM) selectors and micro-electro-mechanical-systems (MEMS).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
