Abstract
High quality silicon on insulator (SOI) materials have been successfully produced using the unibond method, a new member of SOI technology. The quality of SOI samples has been investigated by using cross-section transmission electron microscopy, Rutherford backscattering and channeling spectrometry and spreading resistance probe technology. Experimental results indicate that both the thickness uniformity and the crystalline quality of the top Si layer are good. The interface between the top Si layer and SiO2 buried layer is very sharp and straight.
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