Uniaxially Strained Silicon on Insulator with Wafer Level Prepared by Mechanical Bending and Annealing

Abstract

This paper presents the fabrication of uniaxially strained silicon on insulator (SOI) with wafer level prepared by mechanical bending and annealing using a low-cost and simple process. It is found that the strain of the top silicon layer was caused by plastic deformation of the intermediate silicon dioxide layer. Both compressive and tensile strains can be obtained by this process, which is suitable for SOI wafers of different sizes. Micro-Raman measurements showed the top silicon layer with 0.1664% compressive uniaxial strain and 0.077% tensile uniaxial strain.