Uniaxial stress dependence of time-resolved electronic raman scattering in germanium

Abstract

We measured the uniaxial stress (along the [111] crystal axis ranging from 0 to 10 kbar) dependence of the electronic Raman scattering originating from the photoexcited free electrons in Ge-crystal at RT when stimulated by 1.58-eV laser light. We observed the electronic Raman intensity increases as the uniaxial stress increases under cw excitation. We also time-resolved the electronic Raman scattering using the pump-probe method and found that the decay curves elongate with increasing the uniaxial stress. This elongation of the decay is a cause of the increase of the electronic Raman intensity under cw excitation. These phenomena are interpreted considering carrier diffusion.