Abstract
The uniaxial strain is an effective way to change the symmetry of a crystal and thus tuning their electronic properties. In the present work, we elucidate the physical mechanism of the symmetry-broken-induced energy valleys drift in monolayer molybdenum disulfide. When the uniaxial strain reduces the rotational symmetry of valleys from C 3 to C 1 and an in-plane electric field breaks the balance of electron distribution of valleys, the valley dipole can survive readily and quantum nonlinear Hall effect might be realized. Our work offers key insights for understanding the uniaxial strain induced valleys drift in monolayer MoS2, which is critical to precisely control the valleytronics properties of two-dimensional materials.
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