Unexpected surface implanted layer in static random access memory devices observed by microwave impedance microscope

Abstract

Real-space mapping of doping concentration in semiconductor devices is of great importance for the microelectronics industry. In this work, a scanning microwave impedance microscope (MIM) is employed to resolve the local conductivity distribution of a static random access memory sample. The MIM electronics can also be adjusted to the scanning capacitance microscopy (SCM) mode, allowing both measurements on the same region. Interestingly, while the conventional SCM images match the nominal device structure, the MIM results display certain unexpected features, which originate from a thin layer of the dopant ions penetrating through the protective layers during the heavy implantation steps.