Abstract
In order to evaluate the hot electron coherent length from the resonant level width of the resonant tunneling diodes (RTDs), the effects of an undoped layer (spacer) at the electrode-barrier interface is investigated experimentally. The resonant level widths were measured for GaInAs/InP RTDs with 2.6, 5.0 and 50.0 nm-thick spacers. Spacers of 50.0 nm in the emitter electrode give a resonant level width of 8 meV and this corresponds to a hot electron coherent length of 190 nm at 4.2 K in GaInAs.
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