Abstract
The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. In this paper, four kinds of SiC high-power modules are fabricated to investigate fast switching performance. The variations in characteristics of drain-source voltage at turn-on transient under the combined conditions of multiple factors are studied. A characteristic of voltage plateau is observed from the drain-source voltage waveform at turn-on transient in the experiments, and the characteristic is reproduced by simulation. The mechanism behind the voltage plateau is studied, and it is revealed that the characteristic of drain-source voltage plateau is a reflection of the miller plateau effect of gate-source voltage on drain-source voltage under the combined conditions of fast turn-on speed and low DC bus voltage, while the different values of drain-source voltage plateau are attributed to the discrepancy of structure between upper-side and lower-side in the corresponding partial path of the drain circuit loop inside the module, with the standard 62 mm package outline.
Highlights
The switching transient of power devices/modules has been widely studied, based on double pulse test (DPT) experiments
Based on the qualitative comparison and analysis of experimental results shown in Figures 5–9, it can be supposed that the characteristics of voltage plateau shown from the v waveforms at turnit can be supposed that the characteristics of voltage plateau shown from the vDS waveforms at on transient are due to the combined impacts of fast turn-on speed and low V with a specific turn-on transient are due to the combined impacts of fast turn-on speed and low VDD with a specific module structure
silicon carbide (SiC) high power modules are investigated under various test conditions
Summary
All v , v , i characteristics are kept in oscillation state with their respective frequencies which are determined by recovery current of freewheeling diode decreases from its maximum to zero, the iDS decreases from the maximum to IO , the turn-on transient of SiC-MOSFET is completed at the end of this phase. During this phase from t2 to t4 , the operation mode of SiC-MOSFET dies changes from saturation region to linear region. In order to facilitate comparison between the modules we neglect the variations in the value of the turning point and just focus on changes in characteristics of vDS , such as the number of key turning points, whether there is a characteristic of point_2 or not, and whether there is a characteristic of the voltage plateau or not
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