Understanding time-resolved processes in atomic-layer etching of ultra-thin Al2O3 film using BCl3 and Ar neutral beam

Abstract

We scrutinize time-resolved processes occurring in atomic-layer etching (ALET) of ultra-thin Al2O3 film using BCl3 gas and Ar neutral beam by employing density functional theory calculations and experimental measurements. BCl3 gas is found to be preferentially chemisorbed on Al2O3(100) in trans form with the surface atoms creating O-B and Al-Cl contacts. We disclose that the most likely sequence of etching events involves dominant detachment of Al-associated moieties at early etching stages in good agreement with our concurrent experiments on tracking Al2O3 surface compositional variations during Ar bombardment. In this etching regime, we find that ALET requires half the maximum reaction energy of conventional plasma etching, which greatly increases if the etching sequence changes.