Abstract
Thin-film transistor (TFT) devices composed of metal oxide semiconductors have attracted tremendous research attention globally in recent years. Owing to their ability to offer mobility, metal oxide semiconductor materials can enable high-performance TFTs for next-generation integrated display devices. Nevertheless, further breakthroughs of metal oxide TFTs are mainly obstructed by their long-term variability, the reason for which is not yet fully understood. Herein, TFTs based on InSnZnO (ITZO) with various thicknesses (TITZO) were prepared and their long-term stabilities under test temperatures and drain current stress were investigated. The results indicate that ITZO TFTs exhibit outstanding electrical properties regardless of the TITZO, including a high saturated mobility of over 35 cm2V−1s−1 and sharp subthreshold swing. Note that the transfer and output characteristic curves of the device with a thick TITZO of 100 nm express an abnormal current surge when high gate and drain voltages are exerted, which is attributed to the floating body effect, caused when the imposed electric field induces impact ionization near the drain side. More interestingly, these drain current stress results further suggest that the abnormal shift behavior of the electrical properties of the ITZO TFTs with a TITZO of greater than 75 nm is observed to deteriorate gradually with increasing temperature and drain current bias. This study addresses that such a degradation effect should be restrained for the operation of high-mobility devices.
Highlights
Metal oxide semiconductors have recently emerged as extremely sought-after materials for thin-film transistor (TFT) applications [1,2,3,4,5,6]
VVaarriiaattiioonn iinn tthhee ∆ΔVVOONNwwitihthDDCCSSdduurraattiioonnffoorrtthheeTTFFTT ddeevviicceess mmeeaassuurreedd aatt IIDDSSssttrreesssseessooff((aa)) F11i00g,u((rbbe)) 766.00V, ((accr))ia11t22i00o,naainnnddth((dde))Δ11V8800ONμμwAA.i.th DCS duration for the TFT devices measured at IDS stresses of (a)
For 100 nm TITZO devices evaluated at high VGS and VDS values, the transfer and output characteristics exhibited an abnormal rise in current
Summary
Metal oxide semiconductors have recently emerged as extremely sought-after materials for thin-film transistor (TFT) applications [1,2,3,4,5,6]. In the sections of DCS-induced instabilities, for the devices with thicker TITZO TFT and measurement modes with a high VDS and VGS bias, this conclusion of the sudden increase in the μsat was further confirmed. As the test temperature was raised to 50 °C, the Nanomaterials 2020, 10, x FOR PEER REVIEW
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