Understanding the role of engineered cluster evolution in enhancing Ag layer growth on oxides

Abstract

Introducing metallic additives to Ag to expedite continuous layer development leads to optoelectrical losses in Ag transparent electrodes. To minimize these losses, we propose a method that involves strategically introducing metallic additives into Ag clusters during their initial clustering stages, serving as adhesion inducers. In this study, we present novel insights into the impact of Al-incorporated Ag clusters on enhancing Ag layering and the mechanism behind Al-induced Ag cluster evolution. The controlled addition of atomic Al alters the evolution of Ag clusters, accelerating the transition from complete to incomplete coalescence mode. This results in the formation of highly irregularly shaped elongated clusters with a nominal thickness of 1 nm, which in turn accelerates the complete layer formation of Ag on the SiOx buffer layers. This accelerated layering can be attributed to a reduction in surface energy, which hinders atomic migration on Ag surfaces. Moreover, the unexpected release of metallic Al from the Ag domains through oxidation effectively mitigates the optoelectrical losses associated with Al inclusion. Consequently, Ag layer electrodes with remarkably low losses are achieved.