Understanding the role of defects in influencing the thermoelectric properties of SnSe

Abstract

As compared to single crystals, polycrystalline SnSe shows a considerable decline in its ZT value. Optimization of carrier concentration by the way of chemical doping is useful but creates point defect and vacancies that are often overlooked. Here we study polycrystalline Sn0.95M0.05Se (M = Co, Ni, In) with an aim to understand the role of defects. The overall crystal structure and microstructure of SnSe is not much affected with substitution as evident from X-ray diffraction and scanning electron microscopy study. Rietveld refinement confirms the single phase nature of the all compositions and provides unit cell parameters. Analysis of the stoichiometry reveals the presence of cation vacancies. Optical spectroscopy indicates a degradation of the in-direct gap and Urbach band tail-width fitting confirms the presence of localized states within the gap. Electrical resistivity and Seebeck coefficient are adversely affected by defects, but thermal conductivity decreases by almost 50% of SnSe value.