Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source

Abstract

In this paper, TiO2 layers grown on RuO2 by atomic layer deposition (ALD) using tetrakis (dimethyla-mino) titanium (TDMAT) and either oxygen plasma or H2O as oxygen source were analyzed using X-ray diffraction (XRD), Raman spectroscopy, and depth-resolved X-ray Photoelectron spectroscopy (XPS). The main objective is to investigate the surface chemical reactions mechanisms and their influence on the TiO2 film properties. The experimental results using XRD show that ALD deposition using H2O leads to anatase TiO2 whereas a rutile TiO2 is obtained when oxygen-plasma is used as oxygen source. Depth-resolved XPS analysis allows to determine the reaction mechanisms at the RuO2 substrate surface after growth of thin TiO2 layers. Indeed, the XPS analysis shows that when H2O assisted ALD process is used, intermediate Ti2O3 layer is obtained and RuO2 is reduced into Ru as evidenced by high resolution transmission electron microscopy. In this case, there is no possibility to re-oxidize the Ru surface into RuO2 due to the weak oxidation character of H2O and an anatase TiO2 layer is therefore grown on Ti2O3. In contrast, when oxygen plasma is used in the ALD process, its strong oxidation character leads to the re-oxidation of the partially reduced RuO2 following the first Ti deposition step. Consequently, the RuO2 surface is regenerated, allowing the growth of rutile TiO2. A surface chemical reaction scheme is proposed that well accounts for the observed experimental results.