Abstract
High-k/SiGe interface control for low interface state density (Dit) is one of the most critical issues for realizing SiGe-based MOSFETs. Among various SiGe MOS interlayers (ILs), oxide IL passivation performed by low-temperature ozone oxidation is one of the most promising methods. In this study, we have examined the interfacial chemical structures and the electrical properties of the Al2O3/IL/SiGe gate stacks fabricated under various ozone oxidation conditions. It is experimentally found that Dit values vary with two factors, one is the SiOx thickness and the other is the ratio of Si4+ component in SiOx. The increase in the SiOx thickness causes more Ge atoms to accumulate at the IL/SiGe interface, which means more Ge dangling bonds at the interface and higher Dit in the band gap. Conversely, the increase in the ratio of Si4+ component in SiOx leads to a decrease in Dit. Based on the perturbation theory of quantum mechanisms, this phenomenon may be explained by the remote coulomb potential perturbation arising from high-oxidation-state Si atoms.
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