Abstract
MAPbBr3 films were deposited on FTO-glass substrates by the spin coating technique. These films were irradiated by Cu ions with a flounce rate of 2×1014 ions/cm2, 4×1014 ions/cm2, and 6×1014 ions/cm2 respectively. MAPbBr3 films exhibited a crystalline nature and a cubic structure, as verified by XRD. The MAPbBr3 film irradiated by 4×1014 ions/cm2 Cu ions has a large grain size (33 nm) and a small Eg (2.11 eV). As a result, the trap-state densities within the perovskite bulk were suppressed at interfaces as well as in the bulk material for smooth and improved carrier transportation. The calculated valence and conduction band edges of MAPbBr3 are ‘-5.60’ and ‘-3.2’, respectively. The film exposed to Cu ions has the CB edge pushed towards the lower value, making it a preferable solar cell material. The non-irradiated and irradiated films by Cu ions have higher carrier life times of 63 ns and 74 ns, respectively. The cell fabricated with ions/cm2 Cu ions-MAPbBr3 film displayed a champion device with FF (0.84), Jsc (9.34 mA-cm−2), Voc (1.098), and PCE (8.59%).
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