Abstract
We present the results of a detailed study of the changes that occur on CdTe buffer layer surfaces grown on ZnTe/Si(211) and GaAs(211)B during the routine thermal cyclic annealing (TCA) process. Observations indicate that CdTe buffer layer surfaces are Te saturated when the TCA is performed under Te overpressure. In the absence of Te flux during the TCA step, the CdTe surface loses CdTe congruently and the typical CdTe nanowires show the presence of nodules on their surfaces. The observed changes in reflection high-energy electron diffraction patterns during TCA are explained in terms of surface chemistry and topography observations. Overall, the Te overpressure is necessary to maintain a smoother and pristine surface to continue the molecular beam epitaxy (MBE) growth.
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