Abstract
We studied the behavior of iron in multicrystalline silicon during phosphorus diffusion by spatially resolved measurements and physical modeling. We present improvements to the previously used models for internal gettering in multicrystalline silicon and phosphorus diffusion gettering. 2-dimensional simulations are used for optimization of the phosphorus diffusion processes for intentionally contaminated wafers regarding the iron distribution, without changing the emitter characteristics. Simulations and experimental results show a reduced interstitial iron concentration after an additional low temperature step at the end of the phosphorus diffusion. The concentration of iron precipitates was reduced by a short annealing at 900°C before the phosphorus diffusion, leading to a carrier lifetime three times higher than compared to the standard process.
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