Abstract
HfO2-based solid-state incandescent light emission devices (SSI-LEDs) with conductive filament-related light emission mechanism are promising candidates for future light emission devices. In this letter, the temperature impact on the electrical and light emission properties of SSI-LEDs has been studied. The increase of the substrate temperature of the device leads to a reduction of the hard breakdown voltage and a decrease of the lighting efficiency. Both behaviors can be attributed to the Si-diffusion-assisted filament mechanism. By understanding such mechanism, we demonstrate a patterned wafer approach, geometrically confining the electrical field to effectively enhance the lighting performance of HfO2 SSI-LED devices. Our results support the explanation of the underlying light mechanism and open an effective pathway to improve the performance of the SSI-LED devices.
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