Abstract
We investigated the electrical properties of a Pt/Nb-doped SrTiO3 (Nb:STO) single crystal Schottky junction. The junction exhibited highly rectifying current–voltage (I–V) characteristics under a DC bias. To make a junction profile, the capacitance–voltage (C–V) curve for reverse bias was measured – the curve showed little change in Schottky barrier height. The large leakage current problem of Nb:STO oxide was overcome using an ultrathin metal–oxide–semiconductor (MOS) capacitor model. On the basis of our results and previous reports, we propose a plausible mechanism for a Pt/Nb:STO Schottky junction, where the tunneling effect is the main cause of the switching.
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