Understanding of the excess channel noise in InAlAs∕InGaAs∕InP high electron mobility transistors in impact ionization regime

Abstract

The characterization and analysis of high frequency noise of InP-based high electron mobility transistors in the impact ionization regime reveal that different physical mechanisms are responsible for the excess channel noise at different frequency ranges. The excess noise at frequencies below 10GHz is mainly due to the hole recombination in the channel. However, excess channel noise at higher frequencies could be dominated by the fluctuation of impact ionization which has a much smaller time constant and therefore a much higher cutoff frequency.