Understanding of Strategic Design of Resist Formulation Through Studying of Quencher-Functional Component and Those Contributions to High Resolution Patterning

Abstract

Utilizing Line and Space (L/S) application on high resolution patterning to critical dimension (CD) below 42nm line thru typical ArF PTD process sees severe problems of trade-off or lack of correlation among linewidth roughness (LWR) and dose response (Esize), which are critical performers for delivering decent patterning ability toward Multiple Patterning Process (MPP). For improving those critical functional performances and reducing those trade-off, it has been carried out a study of various types of Quencher-functional component (QFC) as acid diffusion controller with understanding different gradients in resist matrix and those working models. When incorporated with more surface-active type or not-uniformed distribution type of QFC, it showed higher LWR at 45nm half pitch and all pattern fallen at both 38nm and 37nm half pitch. For the case of QFC having homogeneous gradient or less distribution to surface, it showed more contributions to control of roughness at exposed edge area on line patterns, and extended its functionality to the improvement at 37nm HP. For those different types of QFC as acid diffusion controller, they showed all different level of contribution to LWR and Esize response at 45nm HP to 37nm HP, and followed different efficiency with various concentrations in resist formulation.