Abstract
We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO 2 and investigated their electrical properties using the light current–voltage ( I–V) curve and Suns- V oc measurements. The light I–V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns- V oc measurements showed that the bias-dependence of the light I–V curves did not originate from the recombination in the SiO 2/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I–V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high J sc and fill factor in n-type based Si heterojunction solar cells.
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