Abstract
The nucleation and further crystallization of vaterite on gallium (III)-oxide was investigated by the constant composition technique. The apparent order of the crystallization process was found to be 1.17±0.15 indicative of a surface diffusion controlled mechanism. The number of ions forming the critical nucleus was found to be n *=3. We explore the mechanism of vaterite nucleation on gallia by the PM5 method included in the MOPAC program package. The surface energy of the growing phase was found to be 26.4±2.7 mJ m −2.
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