Understanding Microscopic Properties of Light‐Emitting Diodes from Macroscopic Characterization: Ideality Factor, S‐parameter, and Internal Quantum Efficiency

Abstract

Light-Emitting Diodes and Defects Defects affect the performance of an optoelectronic device in fundamental ways. Dong-Soo Shin and Jong-In Shim (article number 2200042) demonstrate how the macroscopic characterization can be utilized to obtain information on microscopic defects in the active region of the light-emitting diode. They successfully show that macroscopic parameters such as the ideality factor and the S-parameter are correlated with the internal quantum efficiency (IQE) and the high-resolution emission-microscope images that reflect the defects in the device.