Abstract

This Tutorial focuses on the physics of layered compounds under high pressure. We have chosen h-BN and III–VI layered materials as representative materials. h-BN layers are strictly two-dimensional. Layers in III–VI compounds are more complex, and subtle details in their structural behavior play an important role in the evolution of high pressure properties. They are also interesting because they contain a different number of layers in their primitive unit cell and/or have a different ionic character. We begin describing the structural evolution. We discuss the experimental challenges encountered as well as the main findings related to intra- and interlayer compressibility, polytype influence, and geometrical modifications induced by pressure inside the layers. We then describe lattice vibrations. The origin of the modes is reviewed, paying attention to the relationships between atom motions in different layers. We discuss the convenience of redefining the Grüneisen parameter and describe the behavior of rigid layer modes, soft modes, and Davidov pairs. The last section is devoted to the electronic properties. We show that the changes observed when passing from a single layer to a three-dimensional BN are qualitatively similar to those induced by high pressure. The pressure behavior of electronic transitions in III–VI layered compounds is very rich, revealing the subtle balance between intra- and inter-layer interactions. Finally, we take advantage of high pressure studies to explain the formation of the Mexican hat type of valence band at ambient conditions in single layers of InSe and GaSe, but not in three-dimensional compounds.

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