Abstract
The authors have characterized p-i-n solar cell devices with front loaded or ungraded a-SiGe i-layers. The cells have transparent front and back contacts which allow bifacial photocurrent measurements to probe electron or hole limited collection using strongly absorbed blue light through the p or n-layer, respectively. Fill factor and quantum efficiency(V) data indicate that the primary effect of grading the i-layer in the front loaded device is to improve hole collection rather than electron collection. However, electron collection degrades more than hole collection after 200 hours light soaking. The authors conclude that device results do not agree with photoconductivity stability studies on a-SiGe films since stability studies of films show that the electron /spl muspl tau/ is unaffected by light soaking while device results suggest that electron collection degrades significantly. >
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.