Abstract
One of the main causes of degraded performance is the defects in the bulk Cu2ZnSnS4 absorber layer of the kesterite solar cells. In this study, a numerical simulator SCAPS-1D used to understand the effects of each point of antisite defects with the presence of the band tail on the electrical characteristics of Cu2ZnSnS4 solar cells step-by-step. The effects of capture cross-section of SnZn deep multilevel defect and defect concentration of CuZn + ZnCu on cell performances have been analyzed. The results highlight that the control of capture cross-section of the multilevel defects is an important key to take into account for further improvements of Cu2ZnSnS4 solar cell performance.
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