Abstract
One of the main causes of degraded performance is the defects in the bulk Cu2ZnSnS4 absorber layer of the kesterite solar cells. In this study, a numerical simulator SCAPS-1D used to understand the effects of each point of antisite defects with the presence of the band tail on the electrical characteristics of Cu2ZnSnS4 solar cells step-by-step. The effects of capture cross-section of SnZn deep multilevel defect and defect concentration of CuZn + ZnCu on cell performances have been analyzed. The results highlight that the control of capture cross-section of the multilevel defects is an important key to take into account for further improvements of Cu2ZnSnS4 solar cell performance.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.