Abstract
The process of understanding defects in semiconductors that are relevant for device technologies is briefly reviewed. Examples of such defects in silicon, GaAs, GaN and related alloys are discussed. These examples include the study of native defects and self-diffusion in silicon, transition metals in silicon, transition metal gettering, hydrogen in silicon, DX-centers in compound semiconductors, EL2, the arsenic antisite defect in GaAs, and defects in GaN and related alloys.
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