Abstract
We report the crowding current modeling of contact resistance in organic thin film transistors, and interpret the contact behavior based on the model. For the top-contact configuration, the contact resistance is determined by the transport property of both organic bulk and charge accumulation layer close to the organic/dielectric interface. For the bottom-contact configuration, the contact resistance is mainly determined by the transport property of organic bulk. In the both cases, reducing the charge traps in the organic active layer is considered as the essential approach to good contacts for organic thin film transistors.
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