Abstract

The silicon-photomultiplier (SiPM) is becoming the device of choice for different applications, for example in fast timing like in time of flight positron emission tomography (TOF-PET) and in high energy physics (HEP). It is also becoming a choice in many single-photon or few-photon based applications, like for spectroscopy, quantum experiments and distance measurements (LIDAR). In order to fully benefit from the good performance of the SiPM, in particular its sensitivity, the dynamic range and its intrinsically fast timing properties it is necessary to understand, quantitatively describe and simulate the various parameters concerned. These analyses consider the structure and the electrical model of a single photon avalanche diode (SPAD), i.e. the SiPM microcell, and the integration in an array, i.e. the SiPM. Additionally, for several applications a more phenomenological and complete view on SiPMs has to be done, e.g. photon detection efficiency, single photon time resolution, SiPM signal response, gain fluctuation, dark count rate, afterpulse, prompt and delayed optical crosstalk. These quantities of SiPMs can strongly influence the time and energy resolution, for example in PET and HEP. Having a complete overview on all of these parameters allows to draw conclusions on how best performances can be achieved for the various needs of different applications.

Highlights

  • The silicon photomultiplier (SiPM) is a solid state photodetector made of an array of hundreds or thousands of integrated singlephoton avalanche diodes (SPADs), called microcells or pixels [1,2,3,4,5,6]

  • In a SiPM it is possible to count each fired SPAD separately: (i) in a digital fashion, where each SPAD is connected to its own readout electronic circuit [6,9] or (ii) by the amplitude of the sum of the single SPAD signals like in an analog SiPM [1,2,10]

  • This defines all parameters of the SiPM equivalent model except the diode series resistance Rd, which in theory could be estimated by the single SPAD signal rise time

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Summary

Introduction

The silicon photomultiplier (SiPM) ( solid-state photomultiplier, SSPM, or multi pixel photon counter, MPPC) is a solid state photodetector made of an array of hundreds or thousands of integrated singlephoton avalanche diodes (SPADs), called microcells or pixels [1,2,3,4,5,6]. Coupled to organic or inorganic scintillators the SiPM sense the scintillation light and/or Cherenkov light [24,25] with highest time precision They are used in nuclear medical imaging [26,27,28,29,30], for gamma spectroscopy and for time tagging of high energetic particles [5,31,32,33]. New challenges in TOF-PET, high energy physics, time resolved X-ray detection and spectroscopy push developments of the SiPM to achieve single photon time resolutions (SPTRs) as good as 10 ps. An additional focus will as well be given on phenomenological simulations in applications like TOF-PET and new arising challenges in this field

Single photon avalanche diode
Avalanche process
SPAD equivalent electrical model
SiPM equivalent electrical model
Noise and secondary effects in SiPMs
Signal pick-up and front-end electronics
Current–voltage characteristics
Time domain
Functional characterization
Correlated noise
Photon detection efficiency and saturation
Electrical SPICE simulations
Phenomenological simulations
Example of time resolution simulations in TOF-PET
Impact of front-end electronics on the SPTR
Considerations for fast timing and future outlook
Findings
Conclusion
Full Text
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