Abstract
Copper underpotential deposition (UPD) on a conductive hydrous ruthenium oxide (RuO x H y ) surface was studied by progressive cyclic voltammetry and X-ray photoelectron spectroscopy (XPS). Cu UPD on an electrochemically prepared RuO x H y surface started at 0.15 V in a 2 mM CuSO 4 solution and reached a coverage plateau of ca. 0.9 monolayer (ML) beyond -0.05 V (vs. Ag/AgCl). XPS data confirmed that Cu deposits underpotentially on RuO x H y surface. The anodic polarization potential determines the chemical states and affects the Cu UPD/bulk deposition of RuO x H y electrode. We observed close to a 55% increase of underpotential shift for Cu UPD on RuO x H y (ca. 170 mV) in comparison to Ru surface (ca. 110 mV). The results suggest that interfacial binding of the first ML of Cu on RuO x H y is stronger than Ru by 12 kJ mol - 1 . Possible applications of Cu UPD to Ru-based plateable seedless Cu diffusion barrier are discussed.
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