Abstract
Performance of terahertz THz field effect transistor (FET) direct detection rectifying detectors operating in the broadband detection regime taking into account some extrinsic parasitics and detector-antenna impedance matching is considered. Si metal oxide semiconductor FET (MOSFET) and GaAlN/GaN heterojunction FET (HFET) THz detectors in comparison with Schottky barrier diode (SBD) ones are discussed. Optical responsivity Wopt and optical noise equivalent power NEPopt were estimated. The mercury-cadmium-telluride (MCT) hot electron bolometers (HEBs) as THz detectors also were considered.
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