Abstract
P(VF2-TrFE) pyroelectric copolymer is chosen for its high level of compatibility with existing microelectronics processes, and convenient electrical properties for infrared (IR) 8 to 14 μm imagery in the performance range of NETD 0.1 K to 1 K. Low cost sensors are achieved thanks to the monolithic silicon wafer processing, standard package assembly, and uncooled operations, and are nowadays compatible with large volume user's needs and market prices. The paper describes pyroelectric device trade-offs, architecture and process. Based on the interline architecture, the sensor performances of the TH 7441A 128 x 128 area array infrared detector will be presented: compatible with 1 optics, the square array is made of a 80 x 80 μm 2 pixel, on a pixel pitch of 85 μm. The CCD multiplexer using patented on-site processing is designed to deliver the image information at the maximum rate of 50 image/s. Lower rates are achievable. Imaging performances are the following: a NETD of 1.6 K is achieved with an integration time of 10 ms and the use of a f/l optics presenting a transmission of 0.8.
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