Abstract
The GaInAsSb as one of the most important semiconductor alloy systems for infrared detectors is well established. Samples of GaInAsSb alloys have been grown by atmospheric pressure metalorganic chemical vapor deposition on n-GaSb (Te-doped) substrates. The properties of GaInAsSb layers were characterized by single-crystal x-ray diffraction, double-crystal x-ray rocking curve and scanning electron acoustic microscopy. The spectral responses of p+ -GaInAsSb/p-GaInAsSb/n-GaSb detectors showed cut-off wavelength at 2.4 μm, detectivity D* = 1.2 × 109 cmHz0.5/W at room temperature, and quantum efficiency 40%.
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