Abstract
Radiation in the "THz gap" holds great promise for numerous novel applications from navigation aids to medical imaging. An all-silicon antenna coupled MOSFET bolometer, realized in CMOS-SOI-MEMS process is intended to become a cornerstone of a novel focal-plane-array imager aimed at operation in the 0.5-1.5 THz range. The present article reports on the progress in design and characterization of this innovative sensor.
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